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SI2312DS Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2312DS Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si2312DS Vishay Siliconix www.vishay.com 4 Document Number: 71338 S-50574—Rev. E, 04-Apr-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10−3 10−2 1 10 600 10−1 10−4 100 0.01 0 1 10 12 4 6 100 600 0.1 Single Pulse Power Time (sec) 2 8 −0.4 −0.3 −0.2 −0.1 −0.0 0.1 0.2 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10 TA = 25_C Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71338 . |
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