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QM75CY-H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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QM75CY-H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise noted) Unit mA mA mA V V V — µs µs µs °C/W °C/W °C/W Limits Min. — — — — — — 75/100 — — — — — — Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25 °C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings 600 600 600 7 75 75 350 4.5 750 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A –IC=75A (diode forward voltage) IC=50A, VCE=2V/5V VCC=300V, IC=75A, IB1=–IB2=1.5A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. — — — — — — — — — — — — — Max. 1.0 1.0 75 2.0 2.5 1.85 — 2.5 15 3.0 0.35 1.3 0.15 MITSUBISHI TRANSISTOR MODULES QM75CY-H HIGH POWER SWITCHING USE INSULATED TYPE |
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