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TA8231LQ Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TA8231LQ Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 12 page TA8231LQ 2006-04-28 4 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Peak supply voltage (0.2s) VCC (surge) 50 V DC supply voltage VCC (DC) 25 V Operating supply voltage VCC (opr) 18 V Output current (peak) IO (peak) 9 A Power dissipation PD 50 W Operating temperature Topr −30~85 °C Storage temperature Tstg −55~150 °C Electrical Characteristics (unless otherwise specified VCC = 13.2V, f = 1kHz, Rg = 600Ω, Ta = 25°C) Characteristic Symbol Test Cir − cuit Condition Min Typ. Max Unit Quiescent current Iccq ― Vin = 0 ― 150 250 mA Pout (1) ― VCC = 14.4V, THD = 10%, RL = 2Ω ― 42 ― W Pout (2) ― THD = 10%, RL = 2Ω 28 37 ― W Pout (3) ― THD = 10%, RL = 4Ω 19 22 ― W Output power Pout (4) ― THD = 1%, f = 20Hz~20kHz, RL = 4Ω ― 17 ― W Total harmonic distortion THD ― Pout = 4W ― 0.02 0.2 % Voltage gain GV ― Vout = 0.775Vrms (0dBm) 30.5 32 33.5 dB Voltage gain ratio ∆GV ― Vout = 0.775Vrms (0dBm) −1 0 1 dB VNO (1) ― Rg = 0Ω, DIN45405 Noise Filter ― 0.07 ― mVrms Output noise voltage VNO (2) ― Rg = 0Ω, BW = 20Hz~20kHz ― 0.06 0.1 mVrms Ripple rejection ratio R.R. ― fripple = 100Hz, Vout = 0.775Vrms (0dBm), Rg = 600Ω 40 60 ― dB Cross talk C.T. ― Rg = 600Ω, Vout = 0.775Vrms (0dBm) ― 60 ― dB Input resistance RIN ― ― ― 30 ― kΩ Output offset voltage Voffset ― Vin = 0 −200 0 200 mV Stand −by current ISTBY ― Pin(1): GND ― 100 150 µA |
Similar Part No. - TA8231LQ_06 |
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Similar Description - TA8231LQ_06 |
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