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TC7MP85410FT Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC7MP85410FT Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page  TC7MP85410FT 2007-10-19 4 Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High level VIH ⎯ 4.5 to 5.5 2.0 ⎯ ⎯ 2.0 ⎯ Input voltage Low level VIL ⎯ 4.5 to 5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V IOH = −50 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ High level VOH VIN = VIH or VIL IOH = −4 mA 4.5 3.94 ⎯ ⎯ 3.8 ⎯ IOL = 50 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1 Output voltage Low level VOL VIN = VIH or VIL IOL = 4 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44 V Input leakage current IIN VIN = GND 0 to 5.5 ⎯ ⎯ 0.1 ⎯ 1.0 μA ICCL VIN = GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA Quiescent supply current ICCT Per input: VIN = 3.4 V Other input: GND 5.5 ⎯ ⎯ 1.35 ⎯ 1.5 mA Output leakage current IOPD VOUT = 5.5 V 0 ⎯ ⎯ 0.5 ⎯ 5.0 μA AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ⎯ 4.5 6.0 1.0 7.0 Propagation delay time tpLH tpHL ⎯ 5.0 ± 0.5 50 ⎯ 6.5 8.5 1.0 10.0 ns Output to output skew tosLH tosHL (Note 1) 5.0 ± 0.5 50 ⎯ ⎯ 1.0 ⎯ 1.0 ns Power dissipation capacitance CPD (Note 2) ⎯ 19 ⎯ ⎯ ⎯ pF Note 1: Parameter guaranteed by design. tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn| Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/8 (per bit) |
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