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TC7SA04F Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TC7SA04F Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 9 page TC7SA04F/FU 2007-11-01 5 Dynamic Switching Characteristics (Ta = 25°C, input: tr = tf = 2.0 ns, CL = 30 pF) Characteristics Symbol Test Condition VCC (V) Typ. Unit VIN = 1.8 V, VIL = 0 V (Note 11) 1.8 0.25 VIN = 2.5 V, VIL = 0 V (Note 11) 2.5 0.6 Quiet output maximum dynamic VOL VOLP VIN = 3.3 V, VIL = 0 V (Note 11) 3.3 0.8 ns VIN = 1.8 V, VIL = 0 V (Note 11) 1.8 −0.25 VIN = 2.5 V, VIL = 0 V (Note 11) 2.5 −0.6 Quiet output minimum dynamic VOL VOLV VIN = 3.3 V, VIL = 0 V (Note 11) 3.3 −0.8 ns VIN = 1.8 V, VIL = 0 V (Note 11) 1.8 1.5 VIN = 2.5 V, VIL = 0 V (Note 11) 2.5 1.9 Quiet output minimum dynamic VOH VOHV VIN = 3.3 V, VIL = 0 V (Note 11) 3.3 2.2 ns Note 11: Parameter guaranteed by design. Capacitive Characteristics (Ta = 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Input capacitance CIN ⎯ 1.8, 2.5, 3.3 5 pF Power dissipation capacitance CPD fIN = 10 MHz (Note 12) 1.8, 2.5, 3.3 18 pF Note 12: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC (opr) = CPD・VCC・fIN + ICC |
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