M36W0R6030T0ZAQF datasheet(1/26 Pages) STMICROELECTRONICS

Part #	M36W0R6030T0ZAQF

Description	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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December 2004

M36W0R6030T0

M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory

and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

FEATURES SUMMARY

■

MULTI-CHIP PACKAGE

–

1 die of 64 Mbit (4Mb x 16) Flash Memory

–

1 die of 8 Mbit SRAM

■

SUPPLY VOLTAGE

–VDDF = VDDQ = VDDS = 1.7 to 1.95V

■

LOW POWER CONSUMPTION

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

–

Device Code (Top Flash Configuration):

8810h

–

Device Code (Bottom Flash

Configuration): 8811h

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

FLASH MEMORY

■

PROGRAMMING TIME

–

8µs by Word typical for Fast Factory

Program

–

Double/Quadruple Word Program option

–

Enhanced Factory Program options

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode: 66MHz

–

Asynchronous/ Synchronous Page Read

mode

–

Random Access: 70ns

■

DUAL OPERATIONS

–

Program Erase in one Bank while Read in

others

–

No delay between Read and Write

operations

Figure 1. Package

■

BLOCK LOCKING

–

All blocks locked at Power-up

–

Any combination of blocks can be locked

–WPF for Block Lock-Down

■

SECURITY

–

128-bit user programmable OTP cells

–

64-bit unique device number

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

SRAM

■

8 Mbit (512Kb x 16 bit)

■

ACCESS TIME: 70ns

■

LOW VDDS DATA RETENTION: 1.0V

■

POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

FBGA

Stacked TFBGA88

(ZAQ)

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Manufacturer	Part #	Datasheet	Description
Numonyx B.V	M36W0R604040B0ZAQE	441Kb / 22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package
	M36W0R604040B0ZAQF	441Kb / 22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package
	M36W0R604040B1ZAQE	441Kb / 22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package
	M36W0R604040B1ZAQF	441Kb / 22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package
	M36W0R604040T0ZAQE	441Kb / 22P	64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 횞16) PSRAM, multi-chip package

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