TLN105B(F)

2007-10-01

1

TOSHIBA Infrared LED GaAs Infrared Emitter

TLN105B(F)

Lead(Pb)-Free

Remote

−Control Systems

Opto

−Electronic Switches

• Wide half−angle value: θ1/2 = ±23.5° (typ.)

• Excellent radiant−intensity linearity. Modulation by pulse operation

and high frequency is possible.

• TPS703(F) PIN photodiode with filter to screen out visible light

available as detector for remote control

Characteristic

Symbol

Rating

Unit

Forward current

100

mA

Forward current derating

(Ta > 25°C)

−1.33

mA / °C

Pulse forward current

(Note)

1

A

Reverse voltage

5

V

Power dissipation

150

mW

Operating temperature

−20~75

°C

Storage temperature

−30~100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

(Note): Pulse width ≦ 100μs, repetitive frequency = 100 Hz

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

―

1.35

1.5

V

Reverse current

―

―

10

μA

Radiant intensity

12

20

―

mW / sr

Radiant power

―

11

―

mW

Capacitance

―

20

―

pF

Peak emission wavelength

―

950

―

nm

Spectral line half width

Δλ

―

50

―

nm

Half value angle

θ

2

1

―

±23.5

―

°

Unit: mm

TOSHIBA

4−6B5

Weight: 0.3 g (typ.)

Pin Connection

1.

Anode

2.

Cathode

1

2