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TLP190B Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TLP190B
Description  Photocoupler GaA?밃s Ired & Photo−Diode Array
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP190B Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP190B
2007-10-01
2
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward current
IF
20
25
mA
Operating temperature
Topr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.2
1.4
1.7
V
Reverse current
IR
VR = 3 V
10
μA
LED
Capacitance
CT
V = 0, f = 1 MHz
30
60
pF
Forward voltage
VFD
IC = 10 μA
7
V
Reverse current
IRD
VR = 10 V
1
nA
Detector
Capacitance
(anode to cathode)
CTD
V = 0, f = 1 MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
Open voltage
VOC
IF = 10 mA
7
8
V
Short current
ISC
IF = 10 mA
12
20
μA
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute in oil
5000
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn
−on time
tON
0.2
ms
Turn
−off time
tOFF
IF = 20 mA, RSH = 510 kΩ
CL = 1000pF
(Fig. 1)
1
ms
Fig. 1 Switching time test circuit
VOUT
IF
CL
RSH
RSH : External shunt resistance
VOUT
IF
0V
1V
5V
tON
tOFF


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