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TLP190B Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP190B Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TLP190B 2007-10-01 2 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Forward current IF ― 20 25 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA LED Capacitance CT V = 0, f = 1 MHz — 30 60 pF Forward voltage VFD IC = 10 μA ― 7 — V Reverse current IRD VR = 10 V ― 1 — nA Detector Capacitance (anode to cathode) CTD V = 0, f = 1 MHz — ― — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Open voltage VOC IF = 10 mA 7 8 — V Short current ISC IF = 10 mA 12 20 — μA Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10 10 10 14 — Ω AC, 1 minute 2500 — — AC, 1 second in oil — 5000 — Vrms Isolation voltage BVS DC, 1 minute in oil — 5000 — Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Turn −on time tON — 0.2 — ms Turn −off time tOFF IF = 20 mA, RSH = 510 kΩ CL = 1000pF (Fig. 1) — 1 — ms Fig. 1 Switching time test circuit VOUT IF CL RSH RSH : External shunt resistance VOUT IF 0V 1V 5V tON tOFF |
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