Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

M29W800AB80ZA6T Datasheet(PDF) 5 Page - STMicroelectronics

Part # M29W800AB80ZA6T
Description  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
Download  40 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W800AB80ZA6T Datasheet(HTML) 5 Page - STMicroelectronics

  M29W800AB80ZA6T Datasheet HTML 1Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 2Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 3Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 4Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 5Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 6Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 7Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 8Page - STMicroelectronics M29W800AB80ZA6T Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 40 page
background image
5/40
M29W800AT, M29W800AB
DESCRIPTION
The M29W800A is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte or
Word-by-Word basis using only a single 2.7V to
3.6V VCC supply. For Program and Erase opera-
tions the necessary high voltages are generated
internally. The device can also be programmed in
standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase,
Erase Suspend and Resume are written to the de-
vice in cycles of commands to a Command Inter-
face using standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20mm),
SO44 and TFBGA48 0.8 mm ball pitch packages.
Table 1. Signal Names
Organisation
The M29W800A is organised as 1M x8 or 512K
x16 bits selectable by the BYTE signal. When
BYTE is Low the Byte-wide x8 organisation is se-
lected and the address lines are DQ15A–1 and
A0-A18. The Data Input/Output signal DQ15A–1
acts as address line A–1 which selects the lower
or upper Byte of the memory word for output on
DQ0-DQ7, DQ8-DQ14 remain at High impedance.
When BYTE is High the memory uses the address
inputs A0-A18 and the Data Input/Outputs DQ0-
DQ15. Memory control is provided by Chip Enable
E, Output Enable G and Write Enable W inputs.
A Reset/Block Temporary Unprotection RP tri-lev-
el input provides a hardware reset when pulled
Low, and when held High (at VID) temporarily un-
protects blocks previously protected allowing them
to be programed and erased. Erase and Program
operations are controlled by an internal Program/
Erase Controller (P/E.C.). Status Register data
output on DQ7 provides a Data Polling signal, and
DQ6 and DQ2 provide Toggle signals to indicate
the state of the P/E.C operations. A Ready/Busy
RB output indicates the completion of the internal
algorithms.
Memory Blocks
The devices feature asymmetrically blocked archi-
tecture providing system memory integration. Both
M29W800AT and M29W800AB devices have an
array of 19 blocks, one Boot Block of 16 KBytes or
8 KWords, two Parameter Blocks of 8 KBytes or 4
KWords, one Main Block of 32 KBytes or 16
KWords and fifteen Main Blocks of 64 KBytes or
32 KWords. The M29W800AT has the Boot Block
at the top of the memory address space and the
M29W800AB locates the Boot Block starting at the
bottom. The memory maps are showed in Tables
2 and 3.
Each block can be erased separately, any combi-
nation of blocks can be specified for multi-block
erase or the entire chip may be erased. The Erase
operations are managed automatically by the P/
E.C. The block erase operation can be suspended
in order to read from or program to any block not
being erased, and then resumed.
Block protection provides additional data security.
Each block can be separately protected or unpro-
tected against Program or Erase on programming
equipment. All previously protected blocks can be
temporarily unprotected in the application.
Bus Operations
The following operations can be performed using
the appropriate bus cycles: Read (Array, Electron-
ic Signature, Block Protection Status), Write com-
mand, Output Disable, Stan-by, Reset, Block
Protection, Unprotection, Protection Verify, Unpro-
tection Verify and Block Temporary Unprotection.
See Table 5., Read Electronic Signature (follow-
ing AS instruction or with A9 = VID) and Table
6., Read Block Protection with AS Instruction.
A0-A18
Address Inputs
DQ0-DQ7
Data Input/Outputs, Command Inputs
DQ8-DQ14
Data Input/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Don’t Use as Internally Connected


Similar Part No. - M29W800AB80ZA6T

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
M29W800AB80ZA6T STMICROELECTRONICS-M29W800AB80ZA6T Datasheet
234Kb / 33P
   8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
More results

Similar Description - M29W800AB80ZA6T

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
M29F800AT STMICROELECTRONICS-M29F800AT Datasheet
142Kb / 21P
   8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory
M29W800AT STMICROELECTRONICS-M29W800AT Datasheet
234Kb / 33P
   8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W800T STMICROELECTRONICS-M29W800T Datasheet
233Kb / 33P
   8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29F800DT STMICROELECTRONICS-M29F800DT Datasheet
332Kb / 39P
   8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
M29W800DT70N1 STMICROELECTRONICS-M29W800DT70N1 Datasheet
651Kb / 41P
   8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
April 2004
M29W800DT70N6 STMICROELECTRONICS-M29W800DT70N6 Datasheet
651Kb / 41P
   8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
M29F800DT STMICROELECTRONICS-M29F800DT_06 Datasheet
420Kb / 53P
   8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
M29W800DT STMICROELECTRONICS-M29W800DT Datasheet
313Kb / 42P
   8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
M29W160BT STMICROELECTRONICS-M29W160BT Datasheet
170Kb / 25P
   16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W400T STMICROELECTRONICS-M29W400T Datasheet
245Kb / 34P
   4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com