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74V1T125S Datasheet(PDF) 3 Page - STMicroelectronics

Part No. 74V1T125S
Description  SINGLE BUS BUFFER 3-STATE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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 3 page
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DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
VIH
High Level Input
Voltage
4.5 to 5.5
2
2
V
VIL
Low Level Input
Voltage
4.5 to 5.5
0.8
0.8
V
VOH
High Level Output
Voltage
4.5
IO=-50
µA
4.4
4.5
4.4
V
4.5
IO=-8 mA
3.94
3.8
VOL
Low Level Output
Voltage
4.5
IO=50
µA
0.0
0.1
0.1
V
4.5
IO=8 mA
0.36
0.44
IOZ
High Impedance
Output Leakage
Current
5.5
VI =VIH or VIL
VO =VCC or GND
±0.25
±2.5
µA
II
Input Leakage Current
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
ICC
Quiescent Supply
Current
5.5
VI =VCC or GND
1
10
µA
∆ICC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at VCC or
GND
1.35
1.5
mA
IOPD
Output Leakage
Current
0VOUT = 5.5V
0
0.5
5.0
µA
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
CIN
Input Capacitance
4
10
10
pF
COUT
Output Capacitance
10
pF
CPD
Power Dissipation
Capacitance (note 1)
14
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD
•VCC •fIN +ICC
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
VCC (*)
(V)
CL
(pF )
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
tPLH
tPHL
Propagation Delay
Time
5.0
15
3.8
5.5
1.0
6.5
ns
5.0
50
5.3
7.5
1.0
8.5
tPLZ
tPHZ
Output Disable Time
5.0
15
3.6
5.1
1.0
6.0
ns
5.0
50
5.1
7.1
1.0
8.0
tPZH
tPZL
Output Enable Time
5.0
50
6.1
8.8
1.0
10.0
ns
(*) Voltage range is 5V
± 0.5V
74V1T125
3/8




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