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74VHC03 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. 74VHC03
Description  QUAD 2-INPUT OPEN DRAIN NAND GATE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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 3 page
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DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
VCC
(V)
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
VIH
High Level Input
Voltage
2.0
1.5
1.5
V
3.0 to 5.5
0.7VCC
0.7VCC
VIL
Low Level Input
Voltage
2.0
0.5
0.5
V
3.0 to 5.5
0.3VCC
0.3VCC
VOL
Low Level Output
Voltage
2.0
IO=50
µA
0.0
0.1
0.1
V
3.0
IO=50
µA
0.0
0.1
0.1
4.5
IO=50
µA
0.0
0.1
0.1
3.0
IO=4 mA
0.36
0.44
4.5
IO=8 mA
0.36
0.44
IOZ
High Impedance
Output Leakage
Current
5.5
VI =VIH or VIL
VO =VCC or GND
±0.25
±2.5
µA
II
Input Leakage Current
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
ICC
Quiescent Supply
Current
5.5
VI =VCC or GND
2
20
µA
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
TA =25
oC
-40 to 85
oC
Min.
Typ .
Max.
Min .
Max.
CIN
Input Capacitance
4
10
10
pF
COUT
Output Capacitance
5
pF
CPD
Power Dissipation
Capacitance (note 1)
6pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD
• VCC • fIN +ICC/4 (per Gate)
AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns)
Symbol
Parameter
T est Condi tio n
Valu e
Unit
VCC
(V)
CL
(p F)
TA =25
oC
-40 to 85
oC
Min.
T yp.
Max.
Mi n.
Max.
tPZL
Propagation Delay
Time
3.3
(*)
15
RL =1 K
5.5
7.9
1.0
9.5
ns
3.3
(*)
50
RL =1 K
8.0
11.4
1.0
13.0
5.0
(**)
15
RL =1 K
3.7
5.5
1.0
6.5
5.0
(**)
50
RL =1 K
5.2
7.5
1.0
8.5
tPLZ
Propagation Delay
Time
3.3
(*)
50
RL =1 K
8.0
11.4
1.0
13.0
ns
5.0
(**)
50
RL =1 K
5.2
7.5
1.0
8.5
(*) Voltage range is 3.3V
± 0.3V
(**) Voltage range is 5V
± 0.5V
74VHC03
3/7




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