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IRG4PC40KDPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC40KDPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page IRG4PC40KDPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 120 180 IC = 25A Qge Gate - Emitter Charge (turn-on) 16 24 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 51 77 VGE = 15V td(on) Turn-On Delay Time 53 tr Rise Time 33 TJ = 25°C td(off) Turn-Off Delay Time 110 160 IC = 25A, VCC = 480V tf Fall Time 100 150 VGE = 15V, RG = 10Ω Eon Turn-On Switching Loss 0.95 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.76 mJ See Fig. 9,10,14 Ets Total Switching Loss 1.71 2.3 tsc Short Circuit Withstand Time 10 µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time 52 TJ = 150°C, tr Rise Time 37 IC = 25A, VCC = 480V td(off) Turn-Off Delay Time 220 VGE = 15V, RG = 10Ω tf Fall Time 140 Energy losses include "tail" Ets Total Switching Loss 2.67 mJ See Fig. 11,14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 1600 VGE = 0V Coes Output Capacitance 130 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 55 = 1.0MHz trr Diode Reverse Recovery Time 42 60 ns TJ = 25°C See Fig. 74 120 TJ = 125°C 14 IF = 15A Irr Diode Peak Reverse Recovery Current 4.0 6.0 A TJ = 25°C See Fig. 6.5 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge 80 180 nC TJ = 25°C See Fig. 220 600 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery 188 A/µs TJ = 25°C See Fig. During tb 160 TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.46 V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage 2.10 2.6 IC = 25A VGE = 15V 2.70 V IC = 42A See Fig. 2, 5 2.14 IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -13 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 7.0 14 S VCE = 100V, IC = 25A ICES Zero Gate Voltage Collector Current 250 µA VGE = 0V, VCE = 600V 3500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop 1.3 1.7 V IC = 15A See Fig. 13 1.2 1.6 IC = 15A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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