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SI3445DV Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3445DV Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si3445DV Vishay Siliconix www.vishay.com 2 Document Number: 70820 S-50129—Rev. B, 24-Jan-05 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.45 −1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −8 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −8 V, VGS = 0 V, TJ = 70_C −5 mA On-State Drain Currenta ID(on) VDS w −5 V, VGS = −4.5 V −15 A VGS = −4.5 V, ID = −5.6 A 0.034 0.042 Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −4.7 A 0.048 0.060 W DS(on) VGS = −1.8 V, ID = −2.0 A 0.062 0.080 Forward Transconductancea gfs VDS = −10 V, ID = −5.6 A 15 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V 0.7 −1.2 V Dynamicb Total Gate Charge Qg 15 25 Gate-Source Charge Qgs VDS = −4 V, VGS = −4.5 V, ID = −5.6 A 3 nC Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) 20 40 Rise Time tr VDD = −4 V, RL = 4 W 50 100 Turn-Off Delay Time td(off) VDD = −4 V, RL = 4 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 110 220 ns Fall Time tf 60 120 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 60 100 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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