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PCA9549BS Datasheet(PDF) 11 Page - NXP Semiconductors

Part # PCA9549BS
Description  Octal bus switch with individually I2C-bus controlled enables
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCA9549BS Datasheet(HTML) 11 Page - NXP Semiconductors

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PCA9549_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 11 July 2006
11 of 24
Philips Semiconductors
PCA9549
Octal bus switch with individually I2C-bus controlled enables
9.
Static characteristics
[1]
For operation between published voltage ranges, refer to the worst-case parameters in both ranges.
[2]
VDD must be lowered to 0.2 V in order to reset part.
Table 6.
Static characteristics
VDD = 2.3 V to 3.6 V; VSS = 0 V; Tamb = −40 °C to +85 °C; unless otherwise specified.
See Table 7 on page 12 for VDD = 4.5 V to 5.5 V[1].
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply
VDD
supply voltage
2.3
-
3.6
V
IDD
supply current
Operating mode; VDD = 3.6 V; no load;
VI =VDD or VSS; fSCL = 100 kHz
-20
50
µA
Istb
standby current
Standby mode; VDD = 3.6 V; no load;
VI =VDD or VSS
-
0.1
1
µA
VPOR
power-on reset voltage
no load; VI =VDD or VSS
[2] -
1.6
2.1
V
Input SCL; input/output SDA
VIL
LOW-level input voltage
−0.5
-
+0.3VDD
V
VIH
HIGH-level input voltage
0.7VDD
-6
V
IOL
LOW-level output current
VOL = 0.4 V
3
-
-
mA
VOL = 0.6 V
6
-
-
mA
IL
leakage current
VI =VDD or VSS
−1-
+1
µA
Ci
input capacitance
VI =VSS
-
6
21
pF
Select inputs A0 to A2, RESET
VIL
LOW-level input voltage
−0.5
-
+0.3VDD
V
VIH
HIGH-level input voltage
0.7VDD
-VDD + 0.5
V
ILI
input leakage current
pin at VDD or VSS
−1-
+1
µA
Ci
input capacitance
VI =VSS
-2
5
pF
Pass gate
Ron
ON-state resistance
VDD = 3.0 V to 3.6 V; VO = 0.4 V;
IO =15mA
-7
12
VDD = 2.3 V to 2.7 V; VO = 0.4 V;
IO =10mA
-8
15
Vo(sw)
switch output voltage
Vi(sw) =VDD = 3.3 V; Io(sw) = −100 µA
-
1.9
-
V
Vi(sw) =VDD = 3.0 V to 3.6 V;
Io(sw) = −100 µA
1.6
-
2.8
V
Vi(sw) =VDD = 2.5 V; Io(sw) = −100 µA
-
1.5
-
V
Vi(sw) =VDD = 2.3 V to 2.7 V;
Io(sw) = −100 µA
1.0
-
2.0
V
IL
leakage current
VI =VDD or VSS
−1-
+1
µA
Cio
input/output capacitance
VI =VSS
-3
5
pF


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