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BU808DFI Datasheet(HTML) 1 Page - STMicroelectronics |
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BU808DFI Datasheet(HTML) 1 Page - STMicroelectronics |
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BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON s STMicroelectronics PREFERRED SALESTYPE s NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE s HIGH VOLTAGE CAPABILITY ( > 1400 V ) s HIGH DC CURRENT GAIN ( TYP. 150 ) s U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) s LOW BASE-DRIVE REQUIREMENTS s DEDICATED APPLICATION NOTE AN1184 APPLICATIONS s COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ® INTERNAL SCHEMATIC DIAGRAM June 2000 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCBO Collector-Base Voltage (IE = 0) 1400 V VCEO Collector-Emit ter Volt age (IB = 0) 700 V VEBO Emitt er-Base Voltage (IC =0) 5 V IC Collector Current 8 A ICM Collector Peak Current (tp <5 ms) 10 A IB Base Current 3 A IBM Base Peak Current (tp <5 ms) 6 A Ptot Tot al Dissipation at Tc =25 oC52 W Tstg St orage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperat ure 150 oC 1 2 3 ISOWATT218 1/7 |
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