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AP30G120W Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP30G120W Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 3 page Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal Impedance Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE Fig11. Power Dissipation vs. Junction Fig 12. Gate Charge Characterisitics Temperature 3/3 AP30G120W 0 4 8 12 16 20 0 20406080 Q G , Gate Charge (nC) I C =3 0A V CC =200V V CC =300V V CC =500V 0 5 10 15 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) I C =60 A 30 A 15 A T C =25 o C 0 5 10 15 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) I C =60 A 30 A 15 A T C = 150 o C 1 10 100 1000 1 10 100 1000 10000 V CE , Collector-Emitter Voltage(V) Safe Operating Area V GE =15V T C =125 o C 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 50 100 150 200 250 0 50 100 150 200 Junction Temperature ( ℃ ) |
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