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AP30G120W Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP30G120W
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Download  3 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP30G120W Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
Fig11. Power Dissipation vs. Junction
Fig 12. Gate Charge Characterisitics
Temperature
3/3
AP30G120W
0
4
8
12
16
20
0
20406080
Q G , Gate Charge (nC)
I C =3 0A
V CC =200V
V CC =300V
V CC =500V
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
I C =60 A
30 A
15 A
T C =25
o C
0
5
10
15
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
I C =60 A
30 A
15 A
T C = 150
o C
1
10
100
1000
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
Safe Operating Area
V GE =15V
T C =125
o C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
50
100
150
200
250
0
50
100
150
200
Junction Temperature ( ℃ )


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