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AON4604 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON4604 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol Typ Max 51.5 65 82 100 RθJL 37 50 Symbol Typ Max 51.5 65 82 100 RθJL 37 50 Maximum Junction-to-Lead C Steady-State °C/W Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics: p-channel Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Junction and Storage Temperature Range -55 to 150 -55 to 150 Thermal Characteristics: n-channel 1.9 W TA=70°C 1.2 1.2 Power Dissipation TA=25°C PD 1.9 A TA=70°C 4.3 -3.0 Pulsed Drain Current B 15 -15 Continuous Drain Current A TA=25°C ID 5.4 -20 Gate-Source Voltage ±8 ±8 -3.8 Parameter Max n-channel Drain-Source Voltage 20 Absolute Maximum Ratings TA=25°C unless otherwise noted AON4604 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 20V -20V ID = 5.4A -3.8A (VGS= ±4.5V) RDS(ON) < 42mΩ < 90mΩ (VGS = ±4.5V) RDS(ON) < 52mΩ < 120m Ω (VGS = ±2.5V) RDS(ON) < 72mΩ < 170m Ω (VGS = ±1.8V) General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications). G2 D2 S2 G1 D1 S1 n-channel p-channel G2 S2 G1 S1 D2 D2 D1 D1 1 2 3 4 8 7 6 5 DFN3X2-8L Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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