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3

EMP25P12B

I27149 08/07

Electrical Characteristics:

For proper operation the device should be used within the recommended conditions.

General Description

The EMP module contains six IGBTs and HexFreds

Diodes in a standard inverter configuration. IGBTs used

are the new NPT 1200V-25A (current rating measured at

100C

°), generation V from International Rectifier; the

HexFred diodes have been designed specifically as pair

elements for these power transistors. Thanks to the new

design and technological realization, these devices do not

need any negative gate voltage for their complete turn off;

moreover the tail effect is also substantially reduced

compared to competitive devices of the same family. This

feature tremendously simplifies the gate driving stage.

Another innovative feature in this type of power modules is

the presence of sensing resistors in the three output

phases, for precise motor current sensing and short circuit

protections, as well as another resistor of the same value

in the DC bus minus line, needed only for device

protections purposes. A complete schematic of the EMP

module is shown on page 1 where all sensing resistors

have been clearly evidenced, a thermal sensor with

negative temperature coefficient is also embedded in the

device structure.

The package chosen is mechanically compatible with the

well known EconoPack outline, Also the height of the

plastic cylindrical nuts for the external PCB positioned on

its top is the same as the EconoPack II, so that, with the

only re-layout of the main motherboard, this module can fit

into the same mechanical fixings of the standard

EconoPack II package thus speeding up the device

evaluation in an already existing driver. An important

feature of this new device is the presence of Kelvin

connections for all feedback and command signals

between the board and the module with the advantage of

having all emitter and resistor sensing independent from

the main power path. The final benefit is that all low power

signal from/to the controlling board are unaffected by

parasitic inductances or resistances inevitably present in

the module power layout. The new package outline is

shown on bottom of page 1. Notice that because of high

current spikes on those inputs the DC bus power pins are

doubled in size compared to the other power pins. Module

technology uses the standard and well know DBC (Direct

Bondable Copper): over a thick Copper base an allumina

µm copper foil on both side is

placed and IGBTs and Diodes dies are directly soldered,

through screen printing process. These dies are then

bonded with a 15 mils aluminum wire for power and signal

connections. All components are then completely covered

by a silicone gel for mechanical protection and electrical

isolation purposes.

Symbol

Parameter Definition

Min.

Typ.

Max.

Units

Test Conditions

Fig.

Collector To Emitter Breakdown Voltage

1200

V

µA

Temperature Coeff. of Breakdown Voltage

+1.2

V/ºC

2.28

2.56

5, 6

3.2

3.65

7, 9

Collector To Emitter Saturation Voltage

2.74

3.10

V

10, 11

Gate Threshold Voltage

4.0

5.0

6.0

V

µA

Temp. Coeff. of Threshold Voltage

-1.2

mV/ºC

12

Forward Trasconductance

14.8

16.9

19.0

S

µs

250

325

675

Zero Gate Voltage Collector Current

2000

µA

1.76

2.06

8

Diode Forward Voltage Drop

1.87

2.18

V

8

Diode Reverse Leakage Current

20

µA

Gate To Emitter Leakage Current

±100

nA

R1/2/3

Sensing Resistors

3.96

4

4.04

Rsh

DC bus minus series shunt resistor

3.96

4

4.04

m

Ω