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4

EMP25P12B

I27149 08/07

Switching Characteristics:

For proper operation the device should be used within the recommended conditions.

Symbol

Parameter Definition

Min

Typ

Max

Units

Test Conditions

Fig.

Total Gate Charge (turn on)

169

254

Gate – Emitter Charge (turn on)

19

29

Gate – Collector Charge (turn on)

82

123

nC

23

CT1

Turn on Switching Loss

1.9

3.6

CT4

Turn off Switching Loss

1.3

2.0

Ω, L = 200µH

WF1

Total Switching Loss

3.2

5.6

mJ

Tail and Diode Rev. Recovery included

WF2

Turn on Switching Loss

2.7

4.6

Turn off Switching Loss

2.0

2.3

Total Switching Loss

4.7

6.9

mJ

Ω, L = 200µH

Tail and Diode Rev. Recovery included

13,

15

CT4

WF1

WF2

td (on)

Turn on delay time

192

210

14,16

Tr

Rise time

33

49

CT4

td (off)

Turn off delay time

213

227

WF1

Tf

Fall time

210

379

ns

Ω, L = 200µH

WF2

Input Capacitance

2200

Output Capacitance

210

Reverse Transfer Capacitance

85

PF

f = 1MHz

22

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

Ω

4

CT2

CT3

SCSOA

Short Circuit Safe Operating Area

10

µs

Ω

WF4

Diode reverse recovery energy

1820

2400

µJ

Trr

Diode reverse recovery time

300

ns

Irr

Peak reverse recovery current

25

32

A

Ω, L = 200µH

17,18

19,20

21

CT4

WF3

Each IGBT to copper plate thermal resistance

0.65

ºC/W

Each Diode to copper plate thermal resistance

0.95

ºC/W

Module copper plate to heat sink thermal

resistance. Silicon grease applied = 0.1mm

0.03

ºC/W

See also fig.24 and 25

24,25