D44H8 datasheet(2/5 Pages) STMICROELECTRONICS | NPN SILICON POWER TRANSISTORS

Part No.	D44H8

Description	NPN SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =rated VCEO

10

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =100 mA

for D44H8

for D44H11

60

80

V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =8 A

IB =0.4 A

1

V

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =8 A

IB = 0.8 A

1.5

V

hFE

∗

DC Current G ain

IC =2 A

VCE =1 V

IC =4 A

VCE =1 V

60

40

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

Safe Operating Area

Derating Curves

D44H8/D44H11

2/5

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