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74HC4017BQ Datasheet(PDF) 11 Page - NXP Semiconductors |
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74HC4017BQ Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 23 page 74HC_HCT4017_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 8 January 2008 11 of 23 NXP Semiconductors 74HC4017; 74HCT4017 Johnson decade counter with 10 decoded outputs [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in µW): PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. tt transition time see Figure 10 [2] VCC = 4.5 V - 7 15 - 19 - 22 ns tW pulse width CP0 and CP1 (HIGH or LOW); see Figure 9 VCC = 4.5 V 16 7 - 20 - 24 - ns MR (HIGH); see Figure 9 VCC = 4.5 V 16 4 - 20 - 24 - ns tsu set-up time CP1 to CP0; CP0 to CP1; see Figure 8 VCC = 4.5 V 10 −3 - 13 - 15 - ns th hold time CP1 to CP0; CP0 to CP1; see Figure 8 VCC = 4.5 V 10 6 - 13 - 15 - ns trec recovery time MR to CP0 and MR to CP1; see Figure 9 VCC = 4.5 V 5 −5- 5 - 5 - ns fmax maximum frequency CP0 or CP1; see Figure 9 VCC = 4.5 V 30 61 - 24 - 20 - MHz VCC = 5.0 V; CL =15pF - 67 - - - - - MHz CPD power dissipation capacitance VI = GND to VCC − 1.5 V; VCC =5V; fi = 1 MHz [3] -36 - - - - - pF Table 7. Dynamic characteristics …continued GND = 0 V; tr = tf = 6 ns; CL = 50 pF; see Figure 11. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max |
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