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BTA202X Datasheet(PDF) 6 Page - NXP Semiconductors |
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BTA202X Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BTA202X_SER_D_E_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 6 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 7. Static characteristics Table 6. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BTA202X-600D BTA202X-800D BTA202X-600E BTA202X-800E Unit Min Typ Max Min Typ Max IGT gate trigger current VD =12V; IT = 0.1 A; see Figure 8 T2+ G+ 0.25 - 5 0.5 - 10 mA T2+ G − 0.25 - 5 0.5 - 10 mA T2 − G− 0.25 - 5 0.5 - 10 mA IL latching current VD =12V; IGT = 0.1 A; see Figure 10 T2+ G+ - - 5 - - 12 mA T2+ G − - - 10 - - 20 mA T2 − G− -- 5 - - 12 mA IH holding current VD =12V; IGT = 0.1 A; see Figure 11 -- 5 - - 12 mA VT on-state voltage IT = 3 A; see Figure 9 - 1.63 2 - 1.63 2 V VGT gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - 0.2 0.3 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA |
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