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PESDXV4UF Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESDXV4UF Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page PESDXV4UF_G_W_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 28 January 2008 4 of 16 NXP Semiconductors PESDxV4UF/G/W Very low capacitance quadruple ESD protection diode arrays [1] Device stressed with ten non-repetitive ESD pulses. [2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5. [3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2. Table 7. ESD maximum ratings Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2][3] -12 kV MIL-STD-883 (human body model) -10 kV Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( µs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 µs 50 % IPP; 20 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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