PESD3V3S4UF_PESD5V0S4UF_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 17 January 2008

3 of 13

NXP Semiconductors

PESD3V3S4UF; PESD5V0S4UF

Unidirectional quadruple ESD protection diode arrays

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1, 3, 4 or 6 to pin 2 or 5.

Per device

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2] -30

kV

MIL-STD-883 (human

body model)

-10

kV

Table 7.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Fig 1.

8/20

µs pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

t (

µs)

040

30

10

20

001aaa630

40

80

120

(%)

0

001aaa631

100 %

90 %

t

30 ns

60 ns

10 %