PESDXL4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 14 January 2008

4 of 17

NXP Semiconductors

PESDxL4UF/G/W

Low capacitance unidirectional quadruple ESD protection diode arrays

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[3]

For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.

[3]

For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.

non-repetitive peak reverse

current

square wave;

PESD3V3L4UF

PESD3V3L4UG

PESD3V3L4UW

-

0.9

A

PESD5V0L4UF

PESD5V0L4UG

PESD5V0L4UW

-

0.8

A

non-repetitive peak reverse

power dissipation

square wave;

-6

W

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2][3] -20

kV

MIL-STD-883 (human

body model)

-10

kV

Table 8.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV

Table 6.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit