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S-80929CLPF-G6ZTFG Datasheet(PDF) 9 Page - Seiko Instruments Inc |
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S-80929CLPF-G6ZTFG Datasheet(HTML) 9 Page - Seiko Instruments Inc |
9 / 36 page ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00 S-809xxC Series Seiko Instruments Inc. 9 2. CMOS Output Products Table 8 (Ta =25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test circuit Detection voltage *1 −V DET — −V DET(S) ×0.98 −V DET(S) −V DET(S) ×1.02 V 1 Hysteresis width VHYS S-80913 to 14 −V DET ×0.03 −V DET ×0.05 −V DET ×0.08 S-80915 to 60 −V DET ×0.03 −V DET ×0.05 −V DET ×0.07 Current consumption ISS VDD=2.0 V S-80913 to 14 — 1.0 2.5 μA 2 VDD=3.5 V S-80915 to 26 — 1.1 2.8 VDD=4.5 V S-80927 to 39 — 1.2 3.0 VDD=6.0 V S-80940 to 54 — 1.3 3.3 VDD=7.5 V S-80955 to 60 — 1.4 3.5 Operating voltage VDD — 0.7 — 10.0 V 1 Output current IOUT Output transistor, Nch, VDS=0.5 V VDD=0.95 V S-80913 to 14 0.23 0.64 — mA 3 VDD=1.2 V S-80915 to 60 0.59 1.36 — VDD=2.4 V S-80927 to 60 2.88 4.98 — Output transistor, Pch, VDS=0.5 V VDD=4.8 V S-80913 to 39 1.43 2.39 — 5 VDD=6.0 V S-80940 to 54 1.68 2.78 — VDD=8.4 V S-80955 to 60 2.08 3.42 — Delay time tD CD=4.7 nF VDD=2.0 V S-80913 to 14 2.7 3.6 4.5 ms 4 VDD=3.5 V S-80915 to 26 18 24 30 VDD=4.5 V S-80927 to 39 VDD=6.0 V S-80940 to 54 VDD=7.5 V S-80955 to 60 Detection voltage temperature coefficient *2 DET DET V Ta V − • Δ − Δ Ta =−40°C to +85°C — ±100 ±350 ppm/ °C 1 *1. −V DET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in Table 2.) *2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation. [] () [] [] 1000 C ppm/ V Ta V V Typ. V C mV/ Ta V DET DET DET DET ÷ ° − Δ − Δ × − = ° Δ − Δ • 3 * 2 * *1 *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient |
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