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HCC40105B Datasheet(PDF) 5 Page - STMicroelectronics |
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HCC40105B Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25 °C, CL = 50 pF, RL = 200 kΩ, typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall time = 20 ns) Test Conditions Value Symbol Parameter V DD (V) Min. Typ. Max. Unit t PHL Propagation Delay Time Shift-out or Reset to Data-out Ready 5 185 370 ns 10 90 180 15 65 130 t PHL Propagation Delay Time Shift-in to Data-in Ready 5 160 320 ns 10 65 130 15 45 90 t PZH,tPZL Propagation Delay Time 3-state Control to Data-out 5 140 280 ns 10 60 120 15 40 80 t PHZ,tPLZ Propagation Delay Time 3-State Control to Data-out 5 100 200 ns 10 50 100 15 40 80 t PLH Ripple-through Delay Input to Output 52 4 µs 10 1 2 15 0.7 1.4 t THL,tTL H Transition Time 5 100 200 ns 10 50 100 15 40 80 f I Shift-in or Shift-out Rate 5 1.5 3 MHz 10 3 6 15 4 8 t WH Shift-in Pulse Width 5 200 100 ns 10 80 40 15 60 30 t WL Shift-out Pulse Width 5 360 180 ns 10 160 80 15 100 50 t r Shift-in or Shift-out Rise Time 5 15 µs 10 15 15 15 t f Shift-in Fall Time 5 15 µs 10 15 15 15 t f Shift-out Fall Time 5 15 µs 10 5 15 5 t se tup Data Setup Time 5 0 ns 10 0 15 0 HCC/HCF40105B 5/12 |
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