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HCC4021BM1 Datasheet(PDF) 5 Page - STMicroelectronics |
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HCC4021BM1 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STATIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions Value V I V O |I O |V DD T Lo w* 25 °CT Hi g h * Symbol Parameter (V) (V) ( µA) (V) Min. Max. Min. Typ. Max. Min. Max. Unit I OH Output Drive Current HCC Types 0/ 5 2.5 5 – 2 – 1.6 – 3.2 – 1.15 mA 0/ 5 4.6 5 – 0.64 – 0.51 – 1 – 0.36 0/10 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4 HCF Types 0/ 5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1 0/ 5 4.6 5 – 0.52 – 0.44 – 1 – 0.36 0/10 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4 I OL Output Sink Current HCC Types 0/ 5 0.4 5 0.64 0.51 1 0.36 mA 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4 HCF Types 0/ 5 0.4 5 0.52 0.44 1 0.36 0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4 I IH,IIL Input Leakage Current HCC Types 0/18 Any Input 18 ± 0.1 ±10–5 ± 0.1 ± 1 µA HCF Types 0/15 15 ± 0.3 ±10–5 ± 0.3 ± 1 CI Input Capacitance Any Input 5 7.5 pF *TLow =– 55 °Cfor HCC device : – 40°C for HCF device. *THigh = + 125 °C for HCC device : + 85°C for HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5 V min. with VDD = 15V. DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ, typical temperature coefficient for all VDD = 0.3%/°C values, all input rise and fall time = 20ns) Val ue Symbol Parameter Test Conditions V DD (V) Min. Typ. Max. Unit CLOCKED OPERATI ON t PLH,tPHL Propagation Delay Time 5 160 320 ns 10 80 160 15 60 120 t THL ,tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 f CL * Maximum Clock Input Frequency 5 3 6 MHz 10 6 12 15 8.5 17 t W Clock Pulse Width 5 180 90 ns 10 80 40 15 50 25 * If more than one unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay of the output of the driving stage of the estimated capacitive load. HCC/HCF4014B/4021B 5/13 |
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