Feb.1999

Unit

A

A

A/

µs

W

W

V

V

A

°C

°C

V

N·m

kg·cm

N·m

kg·cm

g

ABSOLUTE MAXIMUM RATINGS

Unit

V

V

V

V

V

V

MITSUBISHI THYRISTOR MODULES

TM25T3A-M,-H

MEDIUM POWER GENERAL USE

INSULATED TYPE

M

400

480

320

400

480

320

H

800

960

640

800

960

640

Symbol

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

Conditions

3-phase fullwave rectified, TC=76.6

°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

°C

Charged part to case

Main terminal screw M5

Mounting screw M5

Typical value

Ratings

60

500

100

5.0

0.5

10

5.0

2.0

–40~125

–40~125

2500

1.47~1.96

15~20

1.47~1.96

15~20

310

Symbol

di/dt

—

—

Parameter

DC output current

Surge (non-repetitive) current

Critical rate of rise of on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Voltage class

ELECTRICAL CHARACTERISTICS

Unit

mA

mA

V

V/

µs

V

V

mA

°C/W

°C/W

M

Ω

Limits

Symbol

dv/dt

—

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

Forward voltage

Critical rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Thermal resistance

Contact thermal resistance

Insulation resistance

Test conditions

Junction to case (per 1/6 module)

Case to fin, Conductive grease applied (per 1/6 module)

Measured with a 500V megohmmeter between main terminal

and case

Min.

—

—

—

500

—

0.25

10

—

—

10

Typ.

—

—

—

—

—

—

—

—

—

—

Max.

4.0

4.0

1.4

—

2.0

—

50

1.5

0.36

—

Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.