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R1200F Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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R1200F Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO--41,m olded plastic Term inals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 gram s Mounting pos ition: Any Ratings at 25 am bient tem perature unles s otherwise specified. Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 0.5A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse capacitance (Note1) trr ns Typical thermal resistance (Note2) RθJA /W Typical junction capacitance (Note3) CJ pF Operating junction temperature range TJ Storage temperature range TSTG 3. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 0.5 0.2 2.5 4.0 2. Thermal resistance f rom junction to ambient. - 55 ---- + 150 NOTE: 1. Measrued with I F=0.5A, IR=1A, Irr=0.25A. 100.0 - 55 ---- + 150 500 35 15 A 5.0 Easily cleaned with alcohol,Isopropanol and sim ilar s olvents IF(AV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS The plas tic m aterial carries U/L recognition 94V-0 R1200F R1500F 1200 1500 1800 2000 A A 30.0 IFSM IR 1260 2000 1400 1200 840 1500 1050 GALAXY ELECTRICAL R1800F R2000F 1800 R1200F --- R2000F HIGH VOLT AGE RECT IFIERS VOLTAGE RANGE: 1200 --- 2000 V CURRENT: 0.2A to 0.5A DO - 41 www.galaxycn.com BLGALAXY ELECTRICAL BL Document Number 0263006 1. |
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