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FMA3011 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FMA3011 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
1 / 9 page 12.7-16GHZ MMIC POWER AMPLIFIER Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com 1 Datasheet v4.0 FMA3011 FEATURES: • Balanced Topology • 37dBm OIP3 • 30dB Gain • Input Return Loss <-15dB • Output Return Loss <-15dB GENERAL DESCRIPTION: The FMA3011 is a high performance 12.7- 16GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from preceding stages can be kept to an absolute minimum. Coupled with the low IMD of this device, highly linear system performance can be achieved, while preserving the overall system gain requirements. It is suitable for use in digital microwave radios and electronic warfare applications. Balanced configuration using Lange couplers ensures excellent return losses and tolerance to external loads. The input stage is self-biased. FUNCTIONAL SCHEMATIC: VDD RF Input VG RF Output TYPICAL APPLICATIONS: • Electronic Warfare • Broadband Communication Infrastructure • Cellular Backhaul • Point-to-Point Radio ELECTRICAL SPECIFICATIONS (ON-WAFER): PARAMETER CONDITIONS (VDD=6.8V, ID=450mA) MIN TYP MAX UNITS Small Signal Gain 13 GHz, pulsed 15 GHz, pulsed 27.7 25.2 30.5 28.5 32.3 31.7 dB dB Input Return Loss 12.5 – 15.5 GHz, Vdd=5V, Vg=-0.5V -13 -10.7 dB Output Return Loss 12.5 – 15.5 GHz, Vdd=5V, Vg=-0.5V -14 -13.7 dB P1dB 13 – 15 GHz, pulsed 26 29.2 32 dBm 3rd Order Output Intercept Point (OIP3) (jig measurement) 13GHz (measured at 22dBm total output power) 15GHz (measured at 22dBm total output power) 35.5 35.5 37 37 dBm dBm Noise Figure (jig measurement) 13 GHz 15 GHz 4.1 4.7 4.5 5.3 dB dB Self-bias Current Total for both input stages 40 60 100 mA Note: TAMBIENT = +25°C, Z0 = 50 Website: www.filtronic.com |
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