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FMA3009 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part # FMA3009
Description  2-20GHZ BROADBAND MMIC AMPLIFIER
Download  10 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA3009 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
2
Pilot Datasheet v2.5
FMA3009
ABSOLUTE MAXIMUM RATINGS:
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PAD LAYOUT:
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
DIFFERENT BIAS
CONFIGURATIONS:
The Pads B, C and D can
be bonded to ground or
left unbonded to achieve
different performances,
as shown on the
following table (see also
page 5 for more
information).
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+20dBm
Drain Voltage
VDD
+10V
Total Power
Dissipation
Ptot
3 W
Thermal Resistivity
θJC
32°C/W
Operating Temp
Toper
-40°C to +85°C
Storage Temp
Tstor
-55°C to +150°C
PAD
REF
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
A
IN
RF in
(100,396)
B
R1
Enable Different
(1896,100)
C
R2
Source Resistors to be
(2046, 100)
D
R3
grounded
(2196, 100)
E
Source
Test Pad
(Resistor bypass)
(2027, 337)
F
OUT
RF Output
(2200, 650)
G
VDD
Drain Voltage
(2156, 1000)
H
GND
Ground
(1738, 995)
I
R5
Cascode Resistors:
(245, 1000)
Enable Different
J
R4
Voltages across the
(95, 1000)
Cascode devices
G
H
I
J
F
A
E
B
D
C
DIE SIZE (
µm)
DIE THICKNESS (
µm)
MIN. BOND PAD PITCH
(
µm)
MIN. BOND PAD OPENING
(
µm x µm )
2300 x 1100
100
150
100 x 100
PADS GROUNDED
B
C
D
TYPICAL BIAS
CURRENT
(MA)
TYPICAL GAIN AT
10 GHZ (DB)
230
9.9
210
9.8
200
9.7
179
9.4
178
9.4
145
9.1
112
8.7
Website: www.filtronic.com


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