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FMA246 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part # FMA246
Description  HIGH GAIN X-BAND MMIC AMPLIFIER
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA246 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

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Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FMA246
Preliminary Datasheet v3.0
ABSOLUTE MAXIMUM RATING1:
Notes:
1TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
3Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 1.4 - (0.004W/°C) x TCARRIER
where TCARRIER= carrier or heatsink temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
°C carrier temperature: PTOT = 1.4 - (0.004 x (55 – 22)) = 1.26W
4Users should avoid exceeding 80% of 2 or more Limits simultaneously
5For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
some degradation in thermal de-rating performance (PTOT = 550mW)
6Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach temperature
limits before the output stage. The aggregate MMIC thermal resistivity is approximately 80
°C/W.
PAD LAYOUT:
2
Note: Co-ordinates are referenced from the bottom left
hand corner of the die to the centre of bond pad opening
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Supply Voltage
VDD
For any operating current
8V
Supply Current
IDD
For VDD < 7V
75% IDSS
RF Input Power
PIN
For standard bias conditions
-8dBm
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
Total Power Dissipation
2,3
PTOT
See De-Rating Note below
1400mW
Gain Compression
Comp.
Under any bias conditions
5dB
Simultaneous Combination of Limits
4
2 or more Max. Limits
80%
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
A
IN
RFIN
104, 836
B
B
ROUT
1962, 822
C
VD
Drain Voltage
770, 1522
D-F
Stage 1: Source
bias resistors
415/556/696,143
G-I
Stage 2: Source
bias resistors
821/962/1102,143
J-L
Stage 3: Source
bias resistors
1234/1374/1513, 143
DIE SIZE
(
μm)
DIE THICKNESS (
μm)
MIN. BOND PAD PITCH
(
μm)
MIN. BOND PAD OPENING
(
μm x μm )
1624 x 2050
100
100
100 x 100
C
A
B
D E F G H I J K L


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