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FMA219 Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors

Part # FMA219
Description  X-BAND LNA MMIC
Download  5 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA219 Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FMA219
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated
RF PERFORMANCE (VDD = +3V, IDD = IOP)
NOISE FIGURE
FMA219BF NOISE FIGURE
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
78
9
10
Frequency (GHz)
POWER TRANSFER CHARACTERISTIC
3
RD-ORDER INTERMODULATION
FMA219 FREQUENCY RESPONSE
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
5
6
7
8
9
1011
1213
1415
Frequency [GHz]
11
S21
FMA219BF POWER TRANSFER CHARACTERISTIC
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
-23.0
-21.0
-19.0
-17.0
-15.0
-13.0
-11.0
-9.0
-7.0
-5.0
-3.0
Pin (dBm)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Pout@7GHz
Pout@9GHz
Pout@11GHz
Comp@7GHz
Comp@9GHz
Comp@11GHz
IMPRODUCTSvs. INPUTPOWERAT9.0GHz
1.0
3.0
5.0
7.0
9.0
11.0
-19.0
-17.0
-15.0
-13.0
-11.0
-9.0
-7.0
Input Power(dBm)
Ou
tp
ut
Po
we
r
(d
B
m)
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
IM
Pr
od
uc
ts
(d
Bc
)
Pout
Im3, dBc
Note: Multiple traces show typical die variation
across a 150mm (6") wafer. Effect of typical
bond wire inductances (25µm dia. 1mm
length, 2 each on input and output ports) is
less than a 0.5dB decrease in S21 (@11GHz),
and no measurable effect on noise figure.
Note: Equivalent output IP3 performance
exceeds 24dBm, input IP3 is typically ≥+2dBm.


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