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FMA219 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FMA219 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
1 / 5 page X-BAND LNA MMIC Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet v3.0 FMA219 FEATURES: • 7.0 – 11.0 GHz Operating Bandwidth • 1.1 dB Noise Figure • 21 dB Small-Signal Gain • 12 dBm Output Power • +3V Single Bias Supply • DC De-coupled Input and Output Ports GENERAL DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85 °C), and conditionally stable if the input port is open-circuited. LAYOUT: YPICAL APPLICATIONS: lifiers T • Low noise front end amp • General X-Band gain block ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Bandwidth BW VDD = +3 V IDD = IOP 7 11 GHz Small Signal Gain S21 VDD = +3 V IDD = IOP 19 21 23 dB Operating Current IOP No RF input 50 65 80 mA Small Signal Gain Flatness ∆S21 VDD = +3 V IDD = IOP ±0.5 ±0.8 Noise Figure NF VDD = +3 V, IDD = IOP 1.1 1.4 dB 3rd Order Intermodulation Distortion IMD VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL -47 dBc Power at 1dB Compression P1dB VDD = +3 V 11.5 12.5 dBm Input Return Loss Input Return Loss @ 9.5GHz + 10GHz S11 S11(9.5+10GHz) VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP -7 -3 -4 dB dB Output Return Loss S22 VDD = +3 V IDD = IOP -16 -10 dB Reverse Isolation S12 VDD = +3 V IDD = IOP -40 -30 dB Note: TAMBIENT = 22°C |
Similar Part No. - FMA219_1 |
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Similar Description - FMA219_1 |
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