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FMA219 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part # FMA219
Description  X-BAND LNA MMIC
Download  5 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA219 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
2
Datasheet v3.0
FMA219
ABSOLUTE MAXIMUM RATING1:
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Supply Voltage
VDD
For any operating current
6V
Supply Current
IDD
For VDD < 5V
100mA
RF Input Power
PIN
For standard bias conditions
5dBm
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
Total Power Dissipation
2,3
PTOT
See De-Rating Note below
750mW
Gain Compression
Comp.
Under any bias conditions
5dB
Thermal Resistance
4
ΘJC
750mW dissipation, heatsink temp 22°C
175°C/W
Notes:
1.
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2.
Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT
where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power
Total Power Dissipation shall be de-rated above 22
°C as follows:
PTOT = (150 – TCASE ) / ΘJC W
where TCASE = Temperature of the on the underside of the package or substrate
3.
The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper
substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the
Thermal Resistance. Further information and assistance is available on request.
4.
ΘJC increases linearly from 175°C/W at a TCASE of 22°C to 210°C/W at a TCASE of 145°C
PAD LAYOUT:
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
A
IN
RFIN
102, 888
B
ROUT
1527, 843
C
VD
Drain Voltage
1177, 103
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
DIE SIZE
(
µm)
DIE THICKNESS (
µm)
MIN. BOND PAD PITCH
(
µm)
MIN. BOND PAD OPENING
(
µm x µm )
1624 x 1624
100
>150
92 x 92
A
B
C


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