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OP249AZ Datasheet(PDF) 3 Page - Analog Devices |
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OP249AZ Datasheet(HTML) 3 Page - Analog Devices |
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3 / 20 page  OP249 Rev. F | Page 3 of 20 SPECIFICATIONS ELECTRICAL CHARACTERISTICS VS = ±15 V, TA = 25°C, unless otherwise noted. Table 1. OP249A OP249F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Offset Voltage VOS 0.2 0.5 0.2 0.7 mV Long Term Offset Voltage1 VOS 0.8 1.0 mV Offset Stability 1.5 1.5 μV/month Input Bias Current IB VCM = 0 V, TA = 25°C 30 75 30 75 pA Input Offset Current IOS VCM = 0 V, TA = 25°C 6 25 6 25 pA Input Voltage Range2 IVR 12.5 12.5 V ±11 ±11 V −12.5 –12.5 V Common-Mode Rejection CMR VCM = ±11 V 80 90 80 90 dB Power-Supply Rejection Ratio PSRR VS = ± 4.5 V to ±18 V 12 31.6 12 50 μV/V Large Signal Voltage Gain AVO VO = ±10 V, RL = 2 kΩ 1000 1400 500 1200 V/mV Output Voltage Swing VO RL = 2 kΩ 12.5 12.5 V ±12.0 ±12.0 V −12.5 –12.5 V Short-Circuit Current Limit ISC Output shorted to ground 36 36 mA ±20 ±50 ±20 ±50 mA −33 –33 mA Supply Current ISY No load, VO = 0 V 5.6 7.0 5.6 7.0 mA Slew Rate SR RL = 2 kΩ, CL = 50 pF 18 22 18 22 V/μs Gain Bandwidth Product3 GBW 3.5 4.7 3.5 4.7 MHz Settling Time tS 10 V step 0.01%4 0.9 1.2 0.9 1.2 μs Phase Margin ΘM 0 dB gain 55 55 Degrees Differential Input Impedance ZIN 1012||6 1012||6 Ω||pF Open-Loop Output Resistance RO 35 35 Ω Voltage Noise en p-p 0.1 Hz to 10 Hz 2 2 μV p-p Voltage Noise Density en fO = 10 Hz 75 75 nV/√Hz fO = 100 Hz 26 26 nV/√Hz fO = 1 kHz 17 17 nV/√Hz fO = 10 kHz 16 16 nV/√Hz Current Noise Density in fO = 1 kHz 0.003 0.003 pA/√Hz Voltage Supply Range VS ±4.5 ±15 ±18 ±4.5 ±15 ±18 V 1 Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent wafer lots at 125°C with LTPD of three. 2 Guaranteed by CMR test. 3 Guaranteed by design. 4 Settling time is sample tested. |
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