SAPM01N

030416

SSE-22334

2／9

61432

３

-２ Electrical Characteristics (Ta=25℃)

SAPM01N

Limits

Parameter

Symbol

Test Conditions

MIN

TYP

MAX

Unit

Drain to Source Breakdown Voltage

150

V

Gate to Source Leakage Current

±

100

nA

Drain to Source Leakage Current

100

μ

A

Gate Threshold Voltage

3.0

3.5

4.0

V

Forward Transconductance

7.0

10

S

Static Drain to Source

On-State Resistance

0.12

0.2

Ω

Input Capacitance

1800

Output Capacitance

330

Reverse Transfer Capacitance

f=1.0MHz

80

pF

Turn-On Delay Time

80

Rise Time

210

Turn-Off Delay Time

360

Fall Time

105

ns

Diode Forward Voltage

5.8

V

４

Trimming process

│

(at 50V/100mA) (at 3mA)

*

・

Measurement values have temperature coefficient; therefore, the frame temperature is controlled and detected to

be 25℃ in order to appropriately trim the resistor value.

・

For inspection, equipments with accuracy of 0.5%, which is checked and corrected regularly, are used.