ADG1219BRJZ-R2 datasheet(4/17 Pages) AD

Part #	ADG1219BRJZ-R2

Description	Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS??SPDT in SOT-23

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Manufacturer	AD [Analog Devices]

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ADG1219

Preliminary Technical Data

Rev.

PrB | Page 4 of 17

B Version1

Parameters

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

POWER REQUIREMENTS

VDD = +16.5 V, VSS = −16.5 V

IDD

0.001

μA typ

Digital inputs = 0 V or VDD

1.0

μA max

IDD

140

μA typ

Digital inputs = 5 V

170

μA max

ISS

0.001

μA typ

Digital inputs = 0 V, 5 V or VDD

1.0

μA max

VDD/VSS

±5/±16.5

V min/max

|VDD | = |VSS|

1 Temperature range for B version is −40°C to +125°C.

2 Guaranteed by design; not subject to production test.

SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

B Version1

Parameters

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

On Resistance (RON)

300

Ω typ

VS = 0 V to 10 V, IS = −1 mA; see Figure 23

475

567

625

Ω max

VDD = 10.8 V, VSS = 0 V

On Resistance Match Between

Channels (∆RON)

4.5

Ω typ

VS = 0 V to 10 V, IS = −1 mA

16

26

27

Ω max

On Resistance Flatness (RFLAT(ON))

60

Ω typ

VS = 3 V, 6 V, 9 V, IS = −1 mA

LEAKAGE CURRENTS

VDD = 13.2 V

Source Off Leakage, IS (Off)

±0.01

nA typ

VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24

±0.1

±0.6

±1

nA max

Drain Off Leakage, ID (Off)

±0.01

nA typ

VS = 1 V/10 V, VD = 10 V/1 V; see Figure 24

±0.1

±0.6

±1

nA max

Channel On Leakage, ID, IS (On)

±0.02

nA typ

VS = VD = 1 V or 10 V, see Figure 25

±0.2

±0.6

±1

nA max

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current, IINL or IINH

0.001

μA typ

VIN = VINL or VINH

±0.1

μA max

Digital Input Capacitance, CIN

3

pF typ

DYNAMIC CHARACTERISTICS2

Transition Time, tTRANSITION

195

ns typ

RL = 300 Ω, CL = 35 pF

250

300

340

ns max

VS = 8 V; see Figure 26

tON (EN)

120

ns typ

RL = 300 Ω, CL = 35 pF

150

190

210

ns max

VS = 8 V; see Figure 26

tOFF (EN)

145

ns typ

RL = 300 Ω, CL = 35 pF

185

220

235

ns max

VS = 8 V; see Figure 26

Break-Before-Make Time Delay, tBBM

70

ns typ

RL = 300 Ω, CL = 35 pF

10

ns min

VS1 = VS2 = 8 V; see Figure 27

Charge Injection

−0.8

pC typ

VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 28

Off Isolation

80

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 29;

Channel-to-Channel Crosstalk

80

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 30

−3 dB Bandwidth

400

MHz typ

RL = 50 Ω, CL = 5 pF; see Figure 31

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