TSI220B1 datasheet(6/9 Pages) STMICROELECTRONICS

Part #	TSI220B1

Description	TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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TSIxxB1

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Symbol

Parameter

Value

Unit

IPP

Non repetitive peak on-sate current (see note 1)

10/1000

µs (open circuit voltage wave shape 10/100 µs)

5/310

µs (open circuit voltage wave shape 10/700 µs)

2/10

µs (open circuit voltage wave shape 2/10 µs)

30

40

75

A

IF

Maximum DC current

0.2

A

ITSM

Non repetitive surge peak on-state current

tp=20ms

t=1s

5

3.5

A

Tstg

Tj

Storage temperature range

Maximum junction temperature

- 55 to +150

150

°C

TL

Maximum lead temperature for soldering during 10 s

260

°C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Note 1 : Pulse waveform :

10/1000

µst

r=10µstp=1000µs

5/310

µst

r=5µstp=310µs

2/10

µst

r=2µstp=10µs

100

50

%I

PP

t

r

p

0

t

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

170

°C/W

THERMAL RESISTANCE

Symbol

Parameter

VRM

Stand-off voltage

VBO

Breakover voltage

VBR

Breakdown voltage

IH

Holding current

IBO

Breakover current

IRM

Leakage current at VRM

IPP

Peak pulse current

C

Capacitance

αT

Temperature coefficient

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

V

I

V

RM

BO

V

RM

I

H

IBO

PP

I

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