STP55NF06 datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STP55NF06

Description	N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP

Electrical characteristics

5/18

Table 5.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

50

200

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 50A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50A,

di/dt = 100A/µs,

VDD = 30V, Tj = 150°C

(see Figure 16)

75

170

4.5

ns

nC

A

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