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M29W800DT45ZE6F Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W800DT45ZE6F Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 52 page March 2008 Rev 10 1/52 1 M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features ■ Supply voltage –VCC = 2.7 V to 3.6 V for program, erase and read ■ Access times: 45, 70, 90 ns ■ Programming time – 10 µs per byte/word typical ■ 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks ■ Program/erase controller – Embedded byte/word program algorithms ■ Erase suspend and resume modes – Read and program another block during erase suspend ■ Unlock bypass program command – Faster production/batch programming ■ Temporary block unprotection mode ■ Common flash interface – 64-bit security code ■ Low power consumption – Standby and automatic standby ■ 100,000 program/erase cycles per block ■ Electronic signature – Manufacturer code: 0020h – Top device code M29W800DT: 22D7h – Bottom device code M29W800DB: 225Bh FBGA TFBGA48 (ZE) 6 x 8 mm TSOP48 (N) 12 x 20 mm SO44 (M) www.numonyx.com |
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