SD2932_04 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	SD2932

Description	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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July 2004

SD2932

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

REV. 5

• GOLD METALLIZATION

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION,

PUSH PULL

• POUT = 300 W MIN. WITH 15 dB GAIN @

175 MHz

DESCRIPTION

The SD2932 is a gold metallized N-Channel MOS

field-effect RF power transistor. The SD2932 it is

intended

for

use in 50 V

dc

large

signal

applications up 250 MHz.

PIN CONNECTION

1

3

2

1. Drain

2. Gate

3. Source

2

3

1

M244

epoxy sealed

ORDER CODES

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

THERMAL DATA

Order Codes

Marking

Package

Packaging

SD2932

M244

Plastic Tray

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain Source Voltage

125

V

VDGR

Drain-Gate Voltage (RGS = 1MΩ)

125

V

VGS

Gate-Source Volatge

±20

V

ID

Drain Current

40

A

PDISS

Power Dissipation

500

W

Tj

Max. Operating Junction Temperature

+200

°C

TSTG

Storage Temperature

-65 to +150

°C

Rth(j-c)

Junction -Case Thermal Resistance

0.35

°C/W

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