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M36W0R6040T3 Datasheet(PDF) 1 Page - Numonyx B.V |
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M36W0R6040T3 Datasheet(HTML) 1 Page - Numonyx B.V |
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1 / 22 page  November 2007 Rev 3 1/23 1 M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory –1 die of 128Mbit (8Mb x16) PSRAM ■ Supply voltage –VDDF = VCCP = VDDQ = 1.7 to 1.95V –VPPF = 9V for fast program ■ Electronic signature – Manufacturer Code: 20h – Device Code: 8819 ■ ECOPACK® package available Flash memory ■ Synchronous / Asynchronous Read – Synchronous Burst Read mode: 108MHz, 66MHz – Asynchronous Page Read mode – Random Access: 96ns ■ Programming time – 4.2µs typical Word program time using Buffer Enhanced Factory Program command ■ Memory organization – Multiple bank memory array: 64 Mbit banks – Four Extended Flash Array (EFA) Blocks of 64 Kbits ■ Dual operations – program/erase in one Bank while read in others – No delay between read and write operations ■ Security – 2112-bit user programmable OTP Cells – 64-bit unique device number ■ 100,000 program/erase cycles per block ■ Common Flash Interface (CFI) ■ Block locking – All Blocks locked at power-up – Any combination of Blocks can be locked with zero latency –WPF for Block Lock-Down – Absolute Write Protection with VPPF = VSS PSRAM ■ Access time: 70ns ■ User-selectable operating modes – Asynchronous modes: Random Read, and Write, Page Read – Synchronous modes: NOR-Flash, Full Synchronous (Burst Read and Write) ■ Asynchronous Page Read – Page Size: 4, 8 or 16 Words – Subsequent Read Within Page: 20ns ■ Burst Read – Fixed Length (4, 8, 16 or 32 Words) or Continuous – Maximum Clock Frequency: 80MHz ■ Low Power Consumption – Active Current: < 25mA – Standby Current: 200µA – Deep Power-Down Current: 10µA ■ Low Power Features – Partial Array Self Refresh (PASR) – Deep Power-Down (DPD) Mode TFBGA107 (ZAC) FBGA www.numonyx.com |
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