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M58WT032QB70ZB6F Datasheet(PDF) 8 Page - Numonyx B.V |
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M58WT032QB70ZB6F Datasheet(HTML) 8 Page - Numonyx B.V |
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8 / 117 page  Description M58WTxxxKT, M58WTxxxKB 8/117 1 Description The M58WT032KT/B and M58WT064KT/B are 32 Mbit (2 Mbit ×16) and 64 Mbit (4 Mbit ×16) non-volatile Flash memories, respectively. They can be erased electrically at block level and programmed in-system on a word-by-word basis using a 1.7 V to 2 V VDD supply for the circuitry and a 2.7 V to 3.3 V VDDQ supply for the input/output pins. An optional 9 V VPP power supply is provided to speed up customer programming. M58WTxxxKT/B is the collective name for all these devices. They feature an asymmetrical block architecture. ● The M58WT032KT/B has an array of 71 blocks, and is divided into 4 Mbit banks. There are 7 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords. ● The M58WT064KT/B has an array of 135 blocks, and is divided into 4 Mbit banks. There are 15 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords. The multiple bank architecture allows dual operations. While programming or erasing in one bank, read operations are possible in other banks. Only one bank at a time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architectures are summarized in Table 2 and Table 3 and the memory maps are shown in Figure 3 and Figure 4. The parameter blocks are located at the top of the memory address space for the M58WT032KT and M58WT064KT, and at the bottom for the M58WT032KB and M58WT064KB. Each block can be erased separately. Erase can be suspended to perform program in any other block, and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100 000 cycles using the supply voltage VDD. Two enhanced factory programming commands are available to speed up programming. Program and erase commands are written to the command interface of the memory. An internal Program/Erase Controller manages the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 52 MHz. The synchronous burst read operation can be suspended and resumed. The device features an automatic standby mode. When the bus is inactive during asynchronous read operations, the device automatically switches to the automatic standby mode. In this condition the power consumption is reduced to the standby value IDD4 and the outputs are still driven. |
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