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STFV4N150 Datasheet(PDF) 5 Page - STMicroelectronics |
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STFV4N150 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Electrical characteristics 5/16 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 4 12 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 4 A, VGS = 0 2V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, di/dt = 100A/µs VDD = 45V (see Figure 21) 510 3 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD = 45V, Tj = 150°C (see Figure 21) 615 4 12.6 ns µC A |
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