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IRF9Z34NPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF9Z34NPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRF9Z34NPbF HEXFET® Power MOSFET PD - 94983 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrialapplicationsatpowerdissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -19 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -14 A IDM Pulsed Drain Current -68 PD @TC = 25°C Power Dissipation 68W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 180 mJ IAR Avalanche Current -10 A EAR Repetitive Avalanche Energy 6.8mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case 2.2 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 Thermal Resistance VDSS = -55V RDS(on) = 0.10Ω ID = -19A TO-220AB l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description 02/05/04 S D G l Lead-Free |
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