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TPS61180RTER Datasheet(PDF) 5 Page - Texas Instruments |
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TPS61180RTER Datasheet(HTML) 5 Page - Texas Instruments |
5 / 26 page www.ti.com RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS TPS61180/1/2 SLVS801A – DECEMBER 2007 – REVISED MARCH 2008 MIN TYP MAX UNIT Vbat Battery input voltage range 5.0 24 V Cin IC supply voltage range 2.7 3.6 V VO Output voltage range Vin 38 V L Inductor 4.7 10 µH CI Input capacitor 1 µF CO Output capacitor 2.2 10 µF FPWM PWM dimming frequency 0.1 1 kHz TA Operating ambient temperature –40 85 °C TJ Operating junction temperature –40 125 °C VBAT = 10.8 V, 0.1 µF at Cin, EN = Logic High, IFB current = 15m A, IFB voltage = 500 mV, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VBAT Battery input voltage range 5.0 24 V Vcc IC supply voltage range TPS61180 only 2.7 3.15 3.6 V Vcin Cin pin output voltage TPS61181/TPS61182 only 2.7 3.15 3.6 V Iq_bat Operating quiescent current into VBAT Device enable, switching TPS61180 1 mA no load, Vin = 24 V TPS61181/2 3 Iq_Vcc Operating quiescent current into Cin pin TPS61180 only 2 mA IQ_sw Operating quiescent current into VO VO = 35V 50 µA ISD Shutdown current EN=GND 2 18 µA Vcc_UVLO Cin pin under-voltage lockout threshold TPS61180 only 2.2 2.4 V Vbat_UVLO VBAT under-voltage lockout threshold When Vin ramp down 4.2 4.5 V Vbat_hys VBAT under-voltage lockout hysteresis When Vin ramp up 300 mV EN AND DCTRL VH Logic high voltage 1.2 V VL Logic low voltage 0.4 V RPD Pull down resistor on both pins 400 800 1600 k Ω TSD EN pulse width to shutdown EN high to low TPS61180/1 27 37 ms TPS61182 21 28 CURRENT REGULATION VISET ISET pin voltage 1.204 1.229 1.253 V KISET Current multiple Iout/ISET ISET current = 15 µA and 25 µA 970 1000 1030 IFB Current accuracy Riset = 62K 19.4 20 20.6 mA Km (Imax–Imin)/IAVG ISET current = 15 µA and 25 µA 1 2.5 % Ileak IFB pin leakage current IFB voltage = 20 V on all pins 3 µA IIFB_MAX Current sink max output current IFB = 425 mV 25 mA BOOST OUTPUT REGULATION VIFB_L VO dial up threshold Measured on VIFB(min) 400 mV VIFB_H VO dial down threshold Measured on VIFB(min) 700 mV Vreg_L Min Vout regulation voltage 16 V Vo_step VO stepping voltage 100 150 mV POWER SWITCH RPWM_SW PWM FET on-resistance 0.2 0.45 Ω Rstart Start up charging resistance VO = 0 V 100 300 Ω Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): TPS61180/1/2 |
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