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PRELIMINARY DATA

February 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M29W160BT

M29W160BB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

Low Voltage Single Supply Flash Memory

s

SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s

ACCESS TIME: 70ns

s

PROGRAMMING TIME

–10

µs per Byte/Word typical

s

35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

s

PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

s

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

s

UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

s

TEMPORARY BLOCK UNPROTECTION

MODE

s

SECURITY MEMORY BLOCK

s

LOW POWER CONSUMPTION

– Standby and Automatic Standby

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160BT: 22C4h

– Bottom Device Code M29W160BB: 2249h

44

1

TSOP48 (N)

12 x 20mm

SO44 (M)

LFBGA48 (ZA)

8 x 6 solder balls

FBGA

Figure 1. Logic Diagram

Note: RB not available on SO44 package.

AI00981

20

A0-A19

W

DQ0-DQ14

VCC

M29W160BT

M29W160BB

E

VSS

15

G

RP

DQ15A–1

BYTE

RB