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HRF-SW1001-B Datasheet(PDF) 1 Page - Honeywell Solid State Electronics Center |
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HRF-SW1001-B Datasheet(HTML) 1 Page - Honeywell Solid State Electronics Center |
1 / 6 page HRF-SW1001 ________________________________________________________________________________________________________ Web Site: www.mysoiservices.com Honeywell Email: mysoiservices@honeywell.com Solid State Electronics Center 12001 State Highway 55 2002 1001W Published June 2002 Page 1 Plymouth, Minnesota 55441-4799 1-800-323-8295 SPDT Absorptive RF Switch Features • High Isolation Of > 40 dB @ 2 GHz • Low Insertion Loss Of 1.1dB @ 2 GHz • DC To 4GHz Operating Frequency • Integrated CMOS Control Logic • Integrated ESD Protection on Digital I/O • Single Positive Supply Voltage • Ultra Small LPCC TM Packaging • Impedance matched for 75 Ohm systems Product Description The Honeywell HRF-SW1001 is a high performance single pole double throw (SPDT) absorptive RF switch that is ideal for use in wireless basestation and handset applications that require minimum power and minimum insertion loss. The HRF-SW1001 is manufactured with Honeywell's patented Silicon On Insulator (SOI) CMOS technology, which provides the performance of GaAs with the economy and integration capabilities of conventional CMOS technology. RF Electrical Specifications @ + 25 oC Results @ Vdd=5.0 =/- 10%, Vss = 0 unless otherwise stated, Z0=75 ohms Parameter Test Condition Frequency Minimum Typical Maximum Units Insertion Loss DC – 0.5 GHz 2.0 GHz 3.0 GHz 0.9 1.1 1.4 1.5 1.7 1.9 dB dB dB Isolation DC – 0.5 GHz 2.0 GHz 3.0 GHz 50 40 35 53.5 42.5 39.0 dB dB dB VSWR* DC – 0.5 GHz 2.0 GHz 3.0 GHz 1.1:1 1.2:1 1.2:1 1.3:1 Ratio Ratio Ratio 1dB Compression Input Power Vss=Gnd Vss= -3 1.0 GHz 1.0 GHz 21 29 dBm dBm Input IP3 Two-Tone Inputs Up To + 5 dBm Vss=Gnd Vss= -3 2.0 GHz 2.0 GHz 35 35 dBm dBm Trise, Tfall* Ton, Toff Transients 10% To 90% 50% Cntl To 90%/10%Rf In-Band 10 20 10 nS nS mV *By design HRF-SW1001 in LPCC TM Package |
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